環(huán)氧樹脂-SiO2空心球納米復(fù)合材料的制備與性能研究.pdf

1、哈爾濱理工大學(xué)碩士學(xué)位論文環(huán)氧樹脂SiO2空心球納米復(fù)合材料的制備與性能研究姓名：張翠翠申請學(xué)位級(jí)別：碩士專業(yè)：@指導(dǎo)教師：周宏201103哈爾濱理下大學(xué)T學(xué)碩j學(xué)位論文PreparationandPropertiesofEpoxy／Si02HollowSpheresNanocompositesAbstractAsagoodthermosettingresin，Epoxyresin(EP)hasbeenwidelyappliedinpr

2、intedcircuitboardandusedascastingmaterialofelectronicapparatusSomeweakpointssuchasthegreatbrittlenessinthecuringstate，lowimpactstrengthandpoordielectricperformance，SOitisdifficulttofitfortherequirementsofthedevelopingoft

3、helargescaleintegratedcircuitandrestrictsitsapplicationinsomespecialoccasionInthispaper，nanostructuredSi02hollowsphereswithparticlesizeof50nmweresuccessfullysynthesizedfromtetraethylorthosilicate(TEOS)bythetemplateapproa

4、chwiththeultrasonicassistedThen，withaddingthenanostructuredSi02hollowspheres，tougheningreagentofpolyurethane(PU)andcuringagentintotheepoxyresin，theEP／Si02hollowspheresnanocompositeswerepreparedbymechanicalblendmethodThec

5、hemicalstructure，morphologydecompositiontemperature(乃)anddielectricpropertiesofthenanocompositeswerecharacterizedbyFourierTransformInfraredSpectrometer(FT—IR)，ScanningElectronicMicroscope(SEM)，thermogravimetricanalysis(T

6、GA)，precisionimpedanceanalyzer，respectivelyTheresultsindicatethatdielectricconstant(F)ofEP／Si02andEP／PU／Si02hollowspheresnanocompositesbothdecreasewithincreasingfrequencyWhenthecontentofSi02hollowspheresismorethan3wt％，￡o

7、fthecompositesdecreaseswiththeincreasingofSi02hollowspheresDielectricloss(tanoOofEP／Si02hollowspheresnanocompositesincreaseswithincreasingfrequencyTangoftheEP／Si02hollowspheresnanocompositesislargerthanthatofthepureEPfro

8、m102Hzto104Hz，whilelessfrom104Hzto100HzWithaddingthepolyurethaneintothematerials，tanc；ofallthesamplesdecreaseswithincreasingfrequencygraduallyfrom10zHzto10j。)Hz，butincreasesfrom103jHzto100HzAtthesamefrequencytan6increase