氧化物稀磁半導(dǎo)體的研究進展.pdf

1、東北師范大學(xué)碩士學(xué)位論文氧化物稀磁半導(dǎo)體的研究進展姓名：任廣劍申請學(xué)位級別：碩士專業(yè)：凝聚態(tài)物理指導(dǎo)教師：劉玉學(xué)20091101AbstractThispapergivestherecentstudiesofMn—dopedZnOand(Co，Mn)，(Mg，Mn)dopedZnOthinfilmsongrowthpreparation，structure，opticalpropertiesandmagneticpropertiesTh

2、eresultshaveshownthatMn—dopedZnOchangesinhexagonalwurtzitestructure，butcrystalstructuredidnotcausesignificanttheZnOlatticeconstantbecamelargersuggestinglargerradiusofMnionsreplacingZnionsMndopingleadstodeteriorationoffil

3、mcrystallinity，andchangedopticalpropertiesofZnOthinfilmsThesessamplesexhibitferromagnetismatroomtemperatureTransitionmetalCO—dopedZnOthinfilmsalsodidnotchangethemicrostructureofZnOHoweverthepoorqualityandtheroughsurfacem

4、orphologywereobservedThesessamplesexhibitthelightemittingpropertiyFromphotoluminescencespectra，theemissionbandswithpurpleandgreenemissioncanbeseenCodopedZnOexhibittheferromagneticpropertyTheoreticalandexperimentalresults

5、showMnintheZnOhasahighersolubilityTheconductiveMndopedZnOmaterialswithholecarriersaremostlikelytohaveroomtemperatureferromagnetismTheCOdopingandtheformationofdefectscanproducemoreholes，itmaybemorebeneficialtoproduceroomt

6、emperatureferromagnetismWeneedtofurtherstudytheoriginofferromagneticandtoexploreitsrelationshipwithtransitionelementsMndopedZnOthinfilmsCO—dopedTechnologyThefutherstudiesaretoobtainhighquality，stabledopedZnOthinfilms，asw