電致發(fā)熱多孔SiC陶瓷制備工藝的優(yōu)化與應(yīng)用研究.pdf

1、西安科技大學(xué)碩士學(xué)位論文電致發(fā)熱多孔SiC陶瓷制備工藝的優(yōu)化與應(yīng)用研究姓名：屈璟林申請(qǐng)學(xué)位級(jí)別：碩士專業(yè)：材料學(xué)指導(dǎo)教師：王曉剛20070420Subject：OptimizationofProcessandApplicationStudyonElectronheatingPorousSiCCeramicSpecialty：MaterialScienceName：QujinglinInstructor：WangXiaogang(Sign

2、ature)(SignatureSiliconcarbidewasastrongcovalentbondcompoumkwhichhasfavorablehightemperaturecapabilityelectricitycapabilitymechanismcapabilityandchemistrycapabilityThechoicenesscapabilityofsiliconcarbideceramicandapplica

3、tionoffoamceramicCallbewellbandedtogetherthrouthpreparingfoamoelamicusingsiliconcarbidematerialTheporoussiliconcarbide嘲amieswerepreparedbypilingthegridswith∞TamicslurryinthesestudiesTheeffectofdifferentcraRworkfagtoroRpr

4、opertiesoffoamsiliconcarbide∞oTamic$wasstudiedandhascarriedOntheoptimizationtoitspreparationcratL111epropertiesandmicro蛐ofporousceramicswereanalyzedanddiscussedbyXRD，SEMOhmmethods11地applicitionofporousc宅wslnicswitsalsost

5、udiedbyexamhlingtheheatingpowerthepurificationabilitytothegasthecatchingabilitytotheparticleandtheregenerationabilityaftercatching，Onthebasisofearlierpedodexperimentthedrysystemandtheunglazedpotteryelevationofmmperatures

6、ystem哦optmlized，whichEffectivelyenhancedtherateofgoodproductsThebestagglu婦tiontemperatureis2200“C，andthebestagglutinationtimeis21rainsmoughchangingthecomponentithasgotfollowingconclusion：Whenfine—grain(o“m～50m)joinsthequ

7、antityscopebet3Ⅳeen0～9％thetestspecimendemonstratedthegoodoverallperformance，whenthequantityofSiCis50哆白electronicresistivityturntolowestO162Dcmwhenthequantityofmakeholematerialbetween1216％，theperformanceofsampleisgoodThro

8、ughthetestthespecimenhasthreegooddimensionalpenetrationaxchitecture，themainapertureisabout400prathemicropassagewayconnectedwithotherpassagewaysmicroapertureabout15pminadditionthespecimenhastheoutstandingheatresistantknoc