iiiv族gaas基半導(dǎo)體太陽能電池的模擬研究

1、華中科技大學(xué)碩士學(xué)位論文III-V族GaAs基半導(dǎo)體太陽能電池的模擬研究姓名：熊衍凱申請學(xué)位級別：碩士專業(yè)：物理電子學(xué)指導(dǎo)教師：陳長清2011-01-04IIABSTRACT As a new type of energy source, solar power is environmentally friendly and can be easily obtained. It is very important for people

2、to solve the energy shortage crisis and derived environmental problems. Up to now, due to the high efficiency of GaAs solar cell (with regards to the conversion efficiency, the more the number of junctions is, the higher

3、 the efficiency, even up to 50% has been expected in theory), it has been paid more attention. After briefly describing the research background and development of GaAs solar cell, its work principle, optical and electri

4、cal characteristics are then introduced. Besides, the usage of simulation software Crosslight APSYS, some relevant equations and models are also given in a short introduction. By utilizing software Crosslight APSYS to si

5、mulate the electrical properties and conversion efficiency of GaAs solar cell, a detailed analysis of the result is provided. Firstly, this thesis provides a detailed simulation process of GaAs single junction solar

6、cell. The program primarily changes the thickness, doping concentration and constitution of alloy material within tolerance limits, and then analyzes how these parameters influence Voc, Jsc, and Eff of the cell. After an

7、alyzing the new structure, then the parameter values are adjusted again, which primarily modifies the concentration of back surface field layer and buffer layer to about 1×1018cm-3 (actual process level). Finally, w

8、e acquire the efficiency of 26.48% (enhanced by 11% with respect to original structure, and the EQE is about 90%), indicating the purpose of improving the efficiency has been achieved. On top of that, this work also stud

9、ies the suitable materials of BSF and Window layer, and the results indicate InGaP and AlGaAs are both appropriate. Then, after a short description of InGaP/GaAs dual junction solar cell, the initial structural values