深紫外波段algan電光效應(yīng)調(diào)制-微電子學(xué)與固體電子學(xué)專業(yè)畢業(yè)論文

1、AbstractNonlinearopticalmaterialsoperatedindeepultraviolethavepotentialapplicationsinhighspeedopticaltelecommunications，whichmuchintereststheinternationalacademicsDuetotheadvantagesoflargechannelcapacityresultedfromwideb

2、gap，thenonlinearopticalpropertyinducedbyintrinsiccrystallographicnoncentrosymmetryelectronenergyb，thecontrollableoptoelectronicintegrationfsemiconductA1GaNbasedsemiconductsarenotonlywidelyappliedonultraviolet(UV)laserdev

3、ices(LDs)lightemittingdiodes(LEDs)，butalsohaveagreatpotentialinnonlinearopticaldevicesincludingelectro—optic(EO)modulatEOswitchfrequencyconverterSOonInthiswk，A1xGalxN／GaNsuperlatticeswithhighA1componentaredesignedgrownfe

4、nhancingitselectroopticeffectviamultiplefieldmodulationsBythefirstprinciplessimulation，thepolarizationfieldsofGaNA1NasrepresentativesofA1GaNbulkmaterialwereanalyzedThesimulationresultsdemonstratedthatthepolarizationincre

5、asedwiththeincreasingofAIcompositionTakingadvantagesofstrongpolarizationattheinterfaceofquantumwellssuperlatticestructure，aAIN／GaNsuperlatticestructurewasdesignedviaVASPsimulationComparedtotheA1GaNbulk，theinterfacestrain

6、inthesuperlatticegivesrisetotheenhancementofpolarizationwhichhascontributionstothegenerationofelectro—opticeffectCombinedthepolarizationsinducedbyhighA1compositionsuperlatticestructure，aGaN／A1xGalxNsuperlatticewithaimpro

7、vementA1compositionof06weregrownviametalganicvapphaseepitaxy(MOVPE)technologyTheXRDspectrumacterizedthegoodcrystalqualityinsuperlatficestructurewhichwasinaccdancewiththedesignByspectroscopicellipsometry(SE)acterization，S

8、Edataofthesamplesunderdifferentappliedbiaseswereacquire也whichshowedanenhancementofEOeffectinsamplewhentheexternalelectricfieldincreasedThelinearEOquadraticEOcoefficientsofthesuperlatticestructurewerefitviatheSEdataItisfo

9、undthattheA1xGalxN／GaN麗mhigherAIcomponentexhibitedlargerEOcoefficientat360111“11comparedwiththepreviousstudyThedispersioncurvesofEOcoefficientswereⅡ萬方數(shù)據(jù)目錄第一章緒論|!l11引言～～l一12紫外電光效應(yīng)材料和器件～～3一121電光效應(yīng)～一3一122紫外電光效應(yīng)材料||“一5123電光調(diào)

10、制||一7一13A1GaN基半導(dǎo)體的非線性光學(xué)效應(yīng)～一9一131AIGaN材料的結(jié)構(gòu)和能帶特性|一一9132A1GaN基半導(dǎo)體的非線性光學(xué)效應(yīng)調(diào)控～11一14論文框架||l2參考文獻(xiàn)|～14第二章材料生長制備和表征～一1721材料外延生長與器件制備～l7211MOVPE生長技術(shù)～一17212外延片加工技術(shù)||一1922材料表征方法～一22221X射線衍射。～22222陰極熒光表征||23223橢圓偏振光譜～2523小結(jié)～～28參考文獻(xiàn)|