AFM電場(chǎng)誘導(dǎo)氧化加工中環(huán)境因素的影響.pdf

1、天津大學(xué)碩士學(xué)位論文AFM電場(chǎng)誘導(dǎo)氧化加工中環(huán)境因素的影響姓名：鄭麗芬申請(qǐng)學(xué)位級(jí)別：碩士專業(yè)：測(cè)試計(jì)量技術(shù)及儀器指導(dǎo)教師：胡小唐20030101ABSTRACTNanotechnologyisananterior、crossingandnewsciencefieldthathasbeengraduallygrowingsincethelate1980sItisanovelscienceandtechnologybasedonthebas

2、icstudyandapplicationresearch，whosefinalaimistofabricatespecifiedfunctionalproductsonthemanometerscaleonthebaseofatomsandmoleculesNanofabrieationtechnologyisthekeypointofnanotechnologyandtheachievementofnanometerdevicede

3、pendsonitsenhancementandinnovationSinceSPMisproventobealleffectivetooltoachievingatomicandmolecularmanipulationandparentingonthenanometerscale，thefabricationtechniquehasattractedattentionofalargenumberofresearchgroupsint

4、heworldTheseyears，theapproachesofnanofabricationusingSPMhaveagreatdealofdevelopmentwhilethenanofabricationbasedOilSPMfieldinducedoxidationiSmostmarkedTheresearchoffieldinducedoxidationbyAFMhasbeengoingalongforabouttenyea

5、rs，butithassomeshortcomingsintheoryandexperimentmethodIntheorythethesismostlytellsabouttheeffectoffabricationparametersandenvironmentparametersonnanostructure，inaddition，theknowledgeofinducedoxidationtheoryisdeepenedandt

6、heappropriatefabricationenvironmentisbroughtforwardInapplication，wehavegropedenvironmentparametersandfabricationparameterstooptimizenanostructure，whichoffersfoundationfornanoelectronicdevicesinthefutureThemaincontentsinc

7、lude：1AnalyzingthebasictheoryofAFMfieldinducedoxidationandfieldoxidationtheoryofSi；2BringingforwardanapproachofeleanoutofSi，andtheRMSofSiafiercleanoutmeetingtherequireofnanofabrication；3Analyzingtheinfluencingfactorsofth

8、resholdvoltage，especiallytheeffectofoxygenconcentrationonthresholdvoltage；4Analyzingtheeffectoffabricationparameters(includingbiasvolmgeandSCanrate)ontheresultsoftheexperiments；5Experimentalizingindifferentenvironmentpar