新型n39;sno,2npp39;si太陽電池的研究

1、云南師范大學(xué)碩士學(xué)位論文新型nSnOnppSi太陽電池的研究姓名：張鶴仙申請學(xué)位級(jí)別：碩士專業(yè)：農(nóng)業(yè)生物環(huán)境與能源工程指導(dǎo)教師：陳庭金20060520云南師范大學(xué)碩士學(xué)位論文Researchonanewtype“nSn02／n—PPSisolarcell’’Discipline：EngineeringofAgrobiologicEnvironmentandEnergyMasterCandidate：ZhangHexianSupervis

2、or：ProfChenTingjin，ProfLiuZuming，ProfLiaoHuaAbstractThedevelopmentofthesolarcellsdrawmuchattentiononincreasinglyimprovingtheefficiencyandreducingtheproductcostBasedonthesolarcellworkprinciple，tandemsolarcellsthatconsisto

3、fahomojunctionandaheterojunctionareimportantsolutionstothisproblem，whichCanachievehigherefficiencybyrelativelylowercostwithdifferentenergybandmaterialsandbedesignedwell—matchedaccordingtosemiconductorenergybandengineerin

4、gtheoryThe“nSn02／n—P—p一Sisolarcell”isanewtypetandemsolarcellwhichbasedonthisideaFirstlytheoreticdesignof“n一Sn02／n—pp一Sisolarcell’’energybandstructureisstrictlycalculatedandpresentedinthispaperOurconclusionisthatthehomeot

5、ypicheterojunctionenergybandstructureofnSn02／nSicanachieve‘‘slick’’linkingwhenlightphosphorusdopingconcentrationNA=21017cm3innSiregionandSn02isheavilydopedSecondlyweacqurien—P—pSichipaccordingtoourtheoreticdesignby“spin—

6、on’sourcediffusiontechnique，SOlightphosphorusdopingconcentrationNA≈51017cm3innSiregionisachievedThirdlywepreparenSnOz：F(Sb)transparenrtconductivethinfilmsascell’SwindowlayerandphotovoltaicworkinglayerThefilms’thicknessis

7、approximately100amandthefilmsquareresistanceis10Q／DIntheend，wemakeelectrodesystembyvacuumevaporationtechniqueandaccomplishtheintegrated‘‘n一Sn02／n—P—p十一Si”solarcellItshouldbeemphasizedthatweaccomplishtheintegrated“n一Sn02／

8、n—Pp一Si”solarcellallbytraditionalmethods，suchasthermaldiffusion，alloyingprocess，printedcontactandspraypyrolysisetcSo，itisaintegratedinnovationoflowercostmanufacturetechnique，andalsocanbeesilyachievedinmassproductionKeywo