低壓CMOS電荷泵的設(shè)計(jì)及應(yīng)用.pdf

1、合肥工業(yè)大學(xué)碩士學(xué)位論文低壓CMOS電荷泵的設(shè)計(jì)及應(yīng)用姓名：楚薇申請(qǐng)學(xué)位級(jí)別：碩士專業(yè)：微電子學(xué)與固體電子學(xué)指導(dǎo)教師：毛友德20040301DesignandApplicationofLowVoltageCMOSChargePumpAbstractChargepumpcircuitsthatmakeuseofchargeaccumulationinthecapacitorcanpumpchargeupwardtoproducevolta

2、gehigherthantheregularsupplyvoltage，andtheyarewidelyusedinmemorycircuits，suchasFlashMemory，fortheprogramminganderasingofthefloatinggatedevicesAtthesametime，chargepumpcircuitsarealsousedinthelow—supply—voltageswitched—cap

3、acitorsystemsthatrequirehighvoltagetodrivetheanalogswitchesanddetodcconvertersandsoforthRecentdevelopmentofportablemixed—modecommunicationsystemshavebroughtlowvoltageandlowpowerconsumptiontobeatendencyforcircuitdesign，so

4、thesupplyvoltagefallscontinuouslyWhenthesupplyvoltageisreducedtoalevel，suchaslV，theanalogMOSswitchwillnotoperateadequatelyInordertoovercomethisproblem，constructingthehighperformancechargepumpcircuitsisessentialforlowvolt

5、ageanalogcircuitdesignInconventionalCMOSchargepumpcircuits，thepumpinghighvoltageislimitedbyMOSthresholdvoltage，sothatitcannotuselesscascadestagestopullupahighvoltagewhichwewanttogenerate，EspeciallyinCMOSN—wellintegratedc

6、ircuitstechnology，thebodyeffectwillcausetheNMOSthresholdvoltagefollowingthepumpingvoltagetobeliftedandthenthehighestpumpingvoltagewillbelimitedTherefore，afour—phasechargepumpcircuitisinventedtosurmountthisproblem，butthec

7、urrentloadingcapabilityofthiscircuitisnnfavorableandthedrivingclocksmusthavefourphasenon—overlappedsignals，Thisthesisfirstlymakesadetailedanalysisandexpatiationforsevernlconventionalchargepumpcircuits，andthenproposesanew

8、two—phasechargepump，andanalyzesitsstructureandoperationalprincipleAndthesimulationsofseveralchargepumpcircuitsincludingthenewtwo—phasechargepumpcircuitarecompared，theresultindicatesthatthenewchargepumpovercomestheshortco

9、mingsoftheconventionalcircuitsandhasthebetterperfofinanceFurthermore，basedontheproposednewchargepumpcircuit，a1Vto33Vhighvoltagegeneratorwhichisusedinanalogswitchcircuitanda3Vto10VhighvoltagegeneratorwhichisappliedtoEEPRO

10、MorFlashmemoryaredesigned，thecomponentsanddesignthoughtoftwohighvoltagegeneratorsarealsodiscussedindetailAndthesimulationsoftwohighvoltagegeneratorsareaccomplishedbyTSMCO18刪CMOStechnology(T018U)，theoutcometestifiesthattw