納米級(jí)銅鋅合金薄膜的研制及其基礎(chǔ)研究.pdf

1、中南大學(xué)碩士學(xué)位論文納米級(jí)銅鋅合金薄膜的研制及其基礎(chǔ)研究姓名：黃巧萍申請(qǐng)學(xué)位級(jí)別：碩士專(zhuān)業(yè)：化學(xué)工藝指導(dǎo)教師：陳振興20040516ABSTRACTTheformationmechanismofCu—ZnalIoy矗lmsisstudiedandanewwaytomeasurethethicknessofnaJlogradeCu—znalloyfilmsisdeveIopedinthisthesisLaminarCuZnalIoyfil

2、ms，whichareusedformakinghighgrademetale任ectpigment，nanogradel鋤inarCuZnpowder，￡lrepreparedbysputt舐ngtecbnique1nthep印er，theef＆ctsm摹debyfourprima拶parameters—sputteringVoltage，嘲etto—subsn’atedistance，sputteringpr旱ssureandspu

3、tteriIlgtime，onmecompone_nts，thegmwmspeed，memickne島sandt11esumcequali妙ofCuZnalloyfilmswercdiscussed卿釃軸gtomeeXperimentresultsUnderdifrerentexperimentconditiollsitIleCucontenL招offilmsvariedf硒m7041％to72Ol％，whichwereslightly

4、lessthaIlthatofthetarget(7228％)Thedi腦renceoftheCucontentsinthefilmswasnomore口lall16％The∞forethee飪毫ctsoftechnica】p啪meters0nthecompositionsofCu—Znalloyfil舢werenegligibleduringsputteringpmcessWitlltheaugmentofsputterir唱Volt

5、age，tllegrowthspeedoffilmsbec啪ehig地raccordill百yandtherelationwasnearJylinearundert11eexperimentedconditionsIncontrast，t11egm、Ⅳthspeedoffilmsbec鋤elowerwithⅡlemcreaseofta唱et—to—subs仃atedistanceTheeffectsofsputte矗ngpressure

6、ont11egrowtllspeedoffilmswere豫thercomplicatedWhentheSputteringpreSsufewaslowerthan1OPa，meaugmentofsp眥eringpressurepromotedthegro、nhoffiImsAsaresult，也egrowt|1speedoffihnsincreasedasmesputteringpressuregrewhj曲eronthecontra

7、ry’whenthesputteringpressurewashigherthan1oPa，theaugmentofSputteringpressureinhibitedmegm、vthofnlmsandtlusthegrowthspeeddecreaLsedassputteringpressuregrewhigherThemaximumofthegrowmSpeedwasobtainedwhensputteringpressurewa

8、sequalto1OPaWiththeextensionoftime，the行l(wèi)msbecamethickerThemainfactoraf詫ctingthesurfacequalityoffilmswasthekineticeneI’gyofCu—ZnalloyparticlesThelowereneIjgyofsputteringtargetparticles，thesmalIerdamnificationtothesurfaceo