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1、東南大學(xué)碩士學(xué)位論文SU8膠接觸式UV光刻模擬姓名：盧偉申請學(xué)位級別：碩士專業(yè)：微電子學(xué)與固體電子學(xué)指導(dǎo)教師：黃慶安李偉華20060301ABSTRACTLithographyplaysanimportantroleinmicrofabricationItisOHeofthebottleneckinmanufacturingsemiconductorcomponentsManufacturersofsemiconductorchipsn

2、eedtopredictfuturelithographiccapabilitiesasaccuratelyaspossibleasthisinformationinfluencesalltheotherprocesschanges(ionimplantation，oxidationdiffusionetchingdepositionctc)thatwilljointlyneedt0bemadeProcesstechnologyadva

3、nceswithmajoroverhaulorcompletereplacementofprocessequipmentsSemiconductormanufacturersrequirecarefulplarmingandcheckstoensurethattheinvestmentwillenablethedesiredgoaltobereachedSimulmionisoneofthekeytoolsusedformakingth

4、esechecksWitllrapidgrowingofinformationtechnologymicrofabricationandintegrationarethetwomaintrendsofdevicesBecausehighaspectratiostructurecarlbeproducedwithUVlitbographyusingSU8photoresistitisveryfittableformanufacturing

5、highaspectratiomicrostrueturesSU一8photoresistiswidelyusedespeciallyintheareaofUVexposelikeUVLIGATheprocessparametersforSU一8alecurrentlymainlyoptimizedbyrepeatedlyexperimentsTheSU一8profilesafterUVlithographyissimulatedint

6、heworkinthispaperThispaperreportsasetofsimulationmodelsofcontactUVlithographyforSU8photoresistanditsC／cprogramThemodelsarebasedonusualsimulationmodelsforthemicallyamplifiedphotoresistaddedwithswellmodelandthemodelfordept

7、hdependentdissolutionrateeffect11”newsetofmodelsaremoreproperforlithographysimulationforthickSU一8resistThecomparisionofsimulationresultsandexperiementresuItsshowstotalerrorbetweenthemislessthan6％The2DsimulationofthickSU一

8、8photoresistprofileafterUVlithographyispresentedTheSU8photoresistisachemicallyamplified，epoxybasednegativeresistThesimulationintheworkisbasedontheearlierresearchofchemicallyamplifiedphotoresistandlithographymechanismandc

9、haractersofSU8resistTheearlierresearchhasbeenfocusedonmodclingthinchemicallyamplifiedphotoresistforsubmicronlithographyandlittlehasbeenmadeonmodelingthickchemicallyamplifiedphotoresistTherefore，novelmodelsforthickchemica

10、llyamplifiedphotoresistwhichfitwellcharactersofSU一8resistissetupT0bcginwith，theearlierworkforlithographysimulationisintrodueted，whichincludesaerialimagemodel，exposemodelforDNQsandchemicallyamplifiedphotoresists(CARs)post

11、bakemodelforCARsandgenericdevelopmentmodelFollowedisthedescriptionofhowtheSU8isevolvedintheprocessesofexposingpostbakinganddevelopingfromphysicalandchemicallyreactionpointofviewBecauseofspecialtyoftheapplicationofSU8phot

12、oresiststwonovelmodelsaresetupforthickSU一8：swellmodelanddapthdependentdissolutionratemodelThelastchapterinvolvestheflowchartofthesimulationwithdetailedexplainationoftheprograminC／CAttheendofthepapertextthecomparionofsimu

13、lationresultsandexperimentresultsaredoneintwoways：comparinggraphsandcomaparingnumedcwidthvaluesTheerrorsarecalculatedforeachcomparionwiththelargesterror6pmandtheleast2panforlOOgm1inewidthItcansaidthatthetotalerrorjslesst

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