0.11微米dram制造合金化工藝良率改善

1、天津大學(xué)碩士學(xué)位論文0.11微米DRAM制造合金化工藝良率改善姓名：徐正磊申請學(xué)位級別：碩士專業(yè)：電子與通信工程指導(dǎo)教師：吳裕功張凱元20080801ABSTRACTABSTPACTTheindustryofsemiconductorintegratedcircuitsisatypicaltechnology—drivenindustryandthemomentumforitsfastupgradingliesintherapidtec

2、hnologicaldevelopmentIntegratedcircuitshave，therefore，becomethemostimportantmaterialbasisforglobalizationandknowledgebasedeconomytodayandsemiconductortechniqueshavebecomeasystematicengineeringwiththehighestprecision，diff

3、icultytechnologicaldensityanddevelopmentspeedamongallprocessingtechniquesDuetotheconstructionofafactoryinICmanufacturingcostisveryhigh，theproductionofintegratedcircuitscostisveryhigh，Inparticularastheprocessofcontinuousi

4、mprovementmanufacturingcostwillbethetideTaiseprofits，wewillhavetoimproveproductyieldsandreducewasteForadvancedintegratedcircuits，mostofthestepshavetobeveryclosetoperfectioncarlguaranteeahighyieldsUsuallyinanewtechnologyo

5、rproductsbeginning，ortheintroductionofasetoftools(machine)，overallyieldsarenotveryhi曲Butthefactorsofloweryieldswillbefoundandcorrected，thenyieldswillcontinuetobeupgradeNewproducts，thenewprocessornewtoolswillbeintroducede

6、veryfewweeksormonths，ThereforeenhanceyieldsbecamesemiconductormanufacturingplantisaneverendingprocessALLOYtechnologyisusedinintegratedcircuitmanufacturingandmetalgatelineconnectingtheprocess，thegateofthemanufacturingproc