外文翻譯----在放熱過程中對半導(dǎo)體熱電偶測量數(shù)據(jù)進(jìn)行數(shù)值分析

1、<p><b>　　外文文獻(xiàn)翻譯譯稿2</b></p><p>　　在放熱過程中對半導(dǎo)體熱電偶測量數(shù)據(jù)進(jìn)行數(shù)值分析</p><p>　　在回收實(shí)驗(yàn)樣品后，并對其分析后得出，在高壓下快速凝聚物質(zhì)是觀察物質(zhì)物理性質(zhì)和化學(xué)性質(zhì)的動(dòng)態(tài)趨勢的重要基礎(chǔ)。在許多情況下不可能用一個(gè)特制的容器來存某種物質(zhì)的特定狀態(tài)，所以會直接關(guān)系到?jīng)_擊波脈沖的物理參數(shù)變化。所以方法要求，人們

2、盡可能的繼續(xù)保持對膠囊內(nèi)物質(zhì)進(jìn)行抽樣，并同時(shí)沖擊波要檢測物質(zhì)，而且處在長時(shí)間的放松狀態(tài)。人們還應(yīng)該記住，沖擊波檢測膠囊實(shí)驗(yàn)是不同于純動(dòng)態(tài)實(shí)驗(yàn)?；谶@個(gè)原因，兩種方法所得到的結(jié)果簡單的比較可得出許多的不正確和不足，特別是在研究某種物質(zhì)的化學(xué)變化。</p><p>　　用沖擊波檢測物質(zhì)的方法，是根據(jù)某些問題而相互結(jié)合的動(dòng)態(tài)方法，解決了傳統(tǒng)的回收凝聚物質(zhì)的方法。在放熱的過程中記錄半導(dǎo)體的熱電現(xiàn)象就是這樣的一個(gè)方法。別的

3、的文章中僅僅只是涉及到對半導(dǎo)體熱電偶的原理的運(yùn)用。這些顯然不足以獲得有關(guān)連續(xù)變量的信息。本文對此提出了建議用計(jì)算方法來分析問題的一般方法，并為活性強(qiáng)的元素制訂解決方案其中錫是用（SNS）來解決。</p><p>　　在對實(shí)驗(yàn)過程中所記錄的半導(dǎo)體熱電偶的放熱圖中，根據(jù)敏感元件內(nèi)部的結(jié)構(gòu)研究利用電平測量內(nèi)部電極的結(jié)構(gòu)，該電極通過平版石灰?guī)r絕緣套管來連接的。在沖擊波實(shí)驗(yàn)裝置中增加負(fù)荷使其速度高于1公里/秒（箭頭方向表示

4、物體的運(yùn)動(dòng)方向）。在動(dòng)態(tài)壓力下降時(shí)，艙內(nèi)溫度呈現(xiàn)一定分布，是隨時(shí)間變化而分布，是為了測量電路的電磁場而發(fā)生的。假設(shè)電磁場是由于半導(dǎo)體的存在可得：</p><p>　　S是半導(dǎo)體的熱電勢，TS1是熱電偶的內(nèi)部電極的溫度; TS2是熱電偶外部界面的溫度。符號的意義是熱電偶的內(nèi)部電極與外部界面之間的溫差。因此，該電路（存在接地電極情況下）如果>0而且>，那么就>0。當(dāng)半導(dǎo)體熱電偶沒有放熱過程，那么電磁

5、場就下降到零，因?yàn)槔鋮s的熱電偶不存在電磁場。原因是在熱釋放過程中，將有一定的電磁場增長下降到零之后，化學(xué)反應(yīng)就會停止。所以本文對此提出了建議用計(jì)算方法來分析問題的一般方法，并為活性強(qiáng)的元素制訂解決方案其中錫是用（SNS）來解決。</p><p>　　如果電極兩端的電壓接近，那它就會被記錄，如果滿足電阻值>>，是測量設(shè)備的輸入電阻和是樣品的內(nèi)部電阻。如果= 50或75在沖擊波實(shí)驗(yàn)中就會被使用，很容易得出

6、研究物質(zhì)的電導(dǎo)率和可直接測量半導(dǎo)體材的數(shù)值。原則上，樣品可以被放置一個(gè)的金屬箔內(nèi)與排除樣品之間產(chǎn)生的熱電偶熱慣性低電極的電路。</p><p>　　在實(shí)驗(yàn)中，我們進(jìn)行了合成反應(yīng)合成了放熱過程的超導(dǎo)材料陶瓷。熱電偶是由活性較強(qiáng)的錫做成，這是一個(gè)熱電功率為的半導(dǎo)體。按照規(guī)定，實(shí)驗(yàn)中的幾何參數(shù)為：，，。用沖擊波轟擊5mm厚的鐵板所產(chǎn)生的壓強(qiáng)為16GP。最初的樣本顯示：混合物由于存在高含量的單質(zhì)銅導(dǎo)致導(dǎo)電性較高。該熱電偶

7、電阻不會使整個(gè)錄音期間0.1Re信號衰減。要使U隨時(shí)間t而變化，我們使用了能自動(dòng)記錄數(shù)據(jù)的F4226轉(zhuǎn)換器把模擬信號轉(zhuǎn)換成數(shù)字信號，在允許你改變掃描速度的基礎(chǔ)上，縮短周期。從示波器上的波形可知，沖擊波載荷著能使半導(dǎo)體進(jìn)行化學(xué)反應(yīng)的負(fù)脈沖。該過程可進(jìn)一步解釋為：在熱釋放狀態(tài)時(shí)，樣本加熱反應(yīng)的情況下熱釋放產(chǎn)生了一個(gè)極性為正極的信號。事實(shí)上，這種脈沖必須是正極的，可從公式成立的條件解釋：>（所研究的混合物中含有活性較強(qiáng)的錫是用SNS來解

8、決）和S> 0 。其次，約17毫秒后，沖擊波進(jìn)入樣品，由于放熱反應(yīng)使TS2的值增加。在電壓上升時(shí)，使它在一段時(shí)間內(nèi)下降（這可能是因?yàn)樵诤铣蛇^程中形成了低電導(dǎo)率的中間產(chǎn)品）。因此會變得比更大。作為最終產(chǎn)品的形式最初的高導(dǎo)電性也會恢復(fù)，因此，隨著的增長。最后，降低了冷卻時(shí)間。</p><p>　　很顯然，要得知示波器為什么會產(chǎn)生這樣波形，就必須建立數(shù)學(xué)模型對電物理過程進(jìn)行仿真實(shí)驗(yàn)。即使是在一個(gè)平面內(nèi)，也是一個(gè)復(fù)

9、雜的問題，其中一個(gè)必須要解決的是不穩(wěn)定的情況下的導(dǎo)熱方程，也要考慮到在該樣本中的導(dǎo)電性能的變化等等。在本論文中，我們考慮的一個(gè)關(guān)系到如何分析錫半導(dǎo)體熱電偶操作數(shù)值的特殊情況。在這里，反應(yīng)系統(tǒng)模型為放熱過程，不同比例的錫和硫的混合也可運(yùn)用與SNS。</p><p><b>　　外文文獻(xiàn)翻譯原文2</b></p><p>　　OF SEMICONDUCTOR THERMO

10、COUPLE OPERATION IN RECORDING EXOTHERMIC PROCESSES IN A RECOVERY CAPSULE</p><p>　　S. S. Nabatov, A. V. Kul'bachevskii, and A. V. Lebedev UDC 539.63+537.226</p><p>　　Numerical simulation is u

11、sed to analyze the operation of a semiconductor tin-monosulfide</p><p>　　thermocoupIe. The element is used to record ezothermic processes in shock-recovery experiments.</p><p>　　We solved the pr

12、oblem in a one-dimensional formulation by considering a multilayer scheme</p><p>　　that models the location of the sample and the thermocouple inside a real flat capsule. Numerical</p><p>　　calc

13、ulations yield time dependences of the thermal electromotive force (EMF) at various heatrelease</p><p>　　rates in the substance under study</p><p>　　High-speed methods of studying the properties

14、 of condensed material under shock compression and shock-recovery experiments with subsequent analysis of the samples are the basis of the dynamic trend in high-pressure physics and chemistry [1]. In many cases, however,

15、 there are no sufficient grounds to assert that the state of the substance recovered in a special capsule is related directly to the changes in the physical parameters recorded in the shock-wave pulse. Methods are requir

16、ed that make it</p><p>　　According to [2], this problem should be solved by various combined methods: dynamic methods, conventional recovery methods, and a new methodical approach based on continuous diagnos

17、tics of a substance inside a capsule using electrical methods. Recording of exothermal processes based on the thermoelectric phenomenon in semiconductors is one such method [3]. The latter article, however, deals only wi

18、th the principles of operation of a semiconductor thermocouple. These are obviously insufficient t</p><p>　　A diagram of experiments on the recording of exothermal processes in a recovery capsule with a semi

19、conductor thermocouple is presented in Fig. 1. Substance 4 under study with sensitive element 5 are placed inside a flat capsule for electric measurements between the front wall of case 1 and massive inside electrode 2.

20、The electrode is insulated from the case by sleeve 3 made of lithographic limestone. Shock-wave loading of the experimental setup is produced by an aluminum striker accelerated by a</p><p>　　where S is the t

21、hermoelectric power of the semiconductor; Tsl is the temperature at the interface between the thermocouple and the internal electrode; Ts2 is the temperature at the interface between the sample and the thermocouple. The

22、sign of the registered signal is determined by the sign of S and that of the temperature difference between the faces of the thermocoup.le. Thus, for this circuit (grounded electrode-capsule case) /ΔE > 0 if S(T) >

23、 0 and Ts2 > Tsl. When there is no exothermal proc</p><p>　　If the voltage U across the electrodes is close to AE, it can only be recorded if the condition Re >> Ri is satisfied, where Re is the inp

24、ut resistance of the measuring device, and Ri is the internal resistance of the experimental unit. Since Re = 50 or 75 ~ are used in shock-wave experiments, it is easy to estimate the electrical conductivities of the stu

25、died substance and the semiconductor material for which the quantity AE can be measured directly. In principle, the sample can be excluded fro</p><p>　　Figure 2 presents an oscilloscope trace that demonstrat

26、es the possibilities of the method. In the</p><p>　　experiment, we registered the synthesis reaction (exothermal process) for superconducting CuaTibYtcOa ceramics. The thermocouple was made of tin monosulfid

27、e, which is a semiconductor compound with a thermoelectric power of +550 #V/K under normal conditions. In accordance with the notation in Fig. 1,the geometric parameters of the experimental arrangement were as follows: I

28、1 = 7 ram, 12 = 13 = 1 ram, and /4 = 16 ram. The amplitude of the shock wave generated inside the steel wall of the capsule b</p><p>　　follows, which is caused by an increase in Ts2 due to the exothermaI rea

29、ction. The rise in voltage, however, is followed by its drop for some time (this is probably due to the fact that intermediate products with a low electrical conductivity are formed in the process of synthesis). As a res

30、ult, Ri becomes much greater than Re. As the final product forms, the initial high electrical conductivity is restored and, accordingly, U grows. Finally, the signal decreases, because of cooling of the cell.</p>

31、<p>　　It is obvious that for detailed interpretation of such oscilloscope traces, one must supplement the experimental results by a mathematical simulation of the registered electrophysical processes. In a general f

32、ormulation even for the plane variant, this is an involved problem, in which one must solve nonstationary heatconduction equations with varying parameters, choose kinetic dependences describing the chemical interaction,

33、take into account the change in the electrical properties of the sample</p><p>　　REFERENCES</p><p>　　1. G. A. Adadurov, T. V. Bavina, O. N. Breusov, et al., "On the relationship between the

34、 state of</p><p>　　material under dynamic compression and results of studies of recovered samples," in: Combustion and Ezplosion: Proc. of the 3rd USSR Symp. on Combustion and Explosion [in Russian], Na

35、uka, Moscow (1972), pp. 523-528.</p><p>　　2. S. S. Nabatov, G. E. Ivanchikhina, A. V. Kolesnikov, et al., "Shock-wave synthesis of tin monosulfide," Khim. Fiz., 14, Nos. 2 and 3, 40-48 (1995).</

36、p><p>　　3. S. S. Nabatov, S. O. Shubitidze, and V. V. Yakushev, "Use of the thermal EMF phenomenon in</p><p>　　semiconductors to study exothermal processes in a recovery capsule," Fiz. Go

37、reniya Vzryva, 26,</p><p>　　No. 6, 114-116 (1990)</p><p>　　4. A. V. Lebedev, S. S. Nabatov, and T. A. Alekseenko, "A measuring complex based on an F4226 analog-to-digital converter and its

38、use for recording of electrical parameters in shock-wave recovery experiments," in: Detonation: Materials of the 9th USSR Symp. on Combustion and Explosion [in Russian], Chernogolovka (1989), pp. 94-96.</p>&

39、lt;p>　　5. S. S. Nabatov and A. V. Lebedev, "Thermoelectric signMs in shock-wave compression of a</p><p>　　semiconducting sample in a flat recovery capsule," Khim. Fiz., 12, No. 2, 167-169 (1993)

40、.</p><p>　　6. A. V. Lebedev, A. V. Kul'bachevskii, and S. S. Nabatov, "On measurements of electrical conductivity of semiconductors in shock-wave recovery experiments," Khim. Fiz., 13, No. 12,

41、128-130 (1994).</p><p>　　7. R. A. Krektuleva and T. M. Platova, "Simulation of the behavior of multicomponent materials in a shock wave," in: Detonation: Materials of the 2nd USSR Symp. on Detonati

42、on [in Russian], No. 2, Chernogolovka (1981), pp. 98-101.</p><p>　　8. W. J. Kolkert, "Calculation of the shock temperature of porous and on-porous high explosives," Propellants and Explosives, No.

43、 4, 71-72 (1979).</p><p>　　9.S. S. Batsanov, M. F. Gogulya, M. A. Brazhnikov, et al., "Behavior of the Sn+S reacting system in shock waves," Fiz. Goreniya Vzryva, 30, No. 3, 107-112 (1994).</p&g