磁控濺射TiNiCu形狀記憶合金薄膜的研究.pdf

1、分類號UDC密級公最多毋廬夕擎碩士研究生學(xué)位論文磁控濺射TiNiCu形狀記憶合金薄膜的研究申請入：學(xué)號：培養(yǎng)單位：學(xué)科專業(yè)：研究方向：指導(dǎo)教師：完成日期：董志遠2111276電子工程學(xué)院微電子學(xué)與固體電子學(xué)功能材料與器件張輝軍副教授2014年03月28日黑龍江大學(xué)碩士論文AbstractInthispaperitmadeTiNiCushapememoryalloyfilmonglassbaseusingRadioFrequencyMag

2、netronSputteringandsystematicallyanalyzedinfluenceofsputterparameterstofilmqualityAtthesametime，thispaperalsooptimizedsputteringtechnologyandsystematicallyanalyzedtransformationtemperature，transformationhysteresisanddefo

3、rmationofthinfilmaftercrystallizationheattreatedThroughpreparationfilmsandsutdyingstructurepropertyoffilms，thepurposeistoobtainshapememoryalloyfilmwhichhasstrongerdriverabilityandfastrespondingspeedAnditishopedtobeanidea

4、lmaterialofmicrosystemdriverThispaperusedAFMandSEMtoanalyzesurfacetopographyandqualityofthefilmByXRDwecanconfumandanalyzecompositionofthefilmThenItestandanalyzetransformationtemperatureandtransformationhysteresisAtlast，o

5、btainthefollowingresults(1)Becausethesputteringyieldofeachelementinthetargetmaterialisdifferent，theelementcompositionproportionoftheTiNiCufilmobtained仔omtheexperimenthasacertaindeviationoftargetThesputteringyieldofTiisli

6、ttleTherefore，intheprocessofexperiment，weshouldnotonlyputpureCuslicesontheTiNitargetmaterialwithsameatomicratio，butalsoneedtoaddacertainamountofpureTi(2)ObservethesurfacemorphologyofaspreparedTiNiCufilmbyAFMandSEM，F(xiàn)oundt

7、hatthesurfaceroughnessofthefilmincreaseswiththesputteringpowerandsputteringpressureincreased；thethicknessofthefilmincreasedwiththesputteringpowerincreasedOptimizetheprocessparametersTheoptimizedsputteringprocessparameter

8、sasfollows：sputteringpressureis06Pa，sputteringpoweris150w，thedistanceoftargetmaterialandsubstrateis100into，thebottomvacuumis9x104PaAftertheoptimizationofsputteringparameters，thefilm’SqualityisgoodTheatomicpercentageofeac

9、helementisTi：Ni，Cu=49：47：4(3)CrystallizationheattreatmentwascarriedoutontheaspreparedfilmThemembraneiscrystallizedcompletelyafter1hvacuumannealingunder650℃TheDSCanalysisresultshowsthatMsiS331k，MfiS318k，Asis329k，Afis340k，