超薄柵氧化層的熱穩(wěn)定性和隧道電流研究.pdf

1、南京理工大學(xué)碩士學(xué)位論文超薄柵氧化層的熱穩(wěn)定性和隧道電流研究姓名：李鋒申請(qǐng)學(xué)位級(jí)別：碩士專業(yè)：物理電子學(xué)指導(dǎo)教師：汪貴華20030101ABSTRACTSincemetal—oxide—semiconductor(MOS)deviceappeared，integrationofintegratedcircuitOc)expandsasMoorelawMeanwhilethedimensionofdevicescalesdown，thet

2、hicknessofSi02gatedielectricshrinksasthesalTlelawButasthethicknessofSi02gatedielectricreachesat15A，thegatecurrentrisesveryquicklyandreachesat1lOA／cm2Thelargegatecurrentbringsoutalotofquestionssuchasthermalstabilitytherma

3、ldissipation，lifetimeetc，SO，itaffectsthedevice’Sfunctionandthedevicecan’tworknormallyInordertesolvethequestions，anewhighKmaterialisdevelopedinsteadofthetraditionalSiOzgatedielectricmaterialtoreducethetunnelingcurrentTheL

4、a203materialwaspaidattentionbecauseofitsgoodgatedielectricproperties，buttherearealotofpropertiesareunderresearch，themostimportantpropertyisthermalstabilityToimprovethesituationtheauthorhasmadethefollowingresearchandachie

5、vedbeneficialresults1Inordertomeasurethethicknessofgatedielectric，anewalgorithmisintroducedtOcalculatethemonolayerandmultilayerthicknessonthebasicoftheoryoftheangle—dependentX—rayPhotoelectronSpectroscopy(xvs)，andasoftwa

6、reisdevelopedonthebasicofthealgorithmThecalculationalresultagreeswiththeresultwhichiscalculatedbyARCticksoftwarewhichwasdevelopedbyNationalPhysicalLaboratory州PL)ofUKThemulti—layermodelalgorithmnotonlycalculatesthethickne

7、ssofgatedielectricbutalsovalidateswhetherthemodelisproperIthashighpracticalmerittoanalyzethestructureofgatedielectricTherealizationofthealgorithmdrivestheresearchofmicro—electronstructure2TheLa203thinfilmispreparedbyRFte

8、chnology，thefilmisanalyzedbyARXPSthethicknessiscalculatedbyQuantitativeAnalysissoftware，thethicknessofSi02thinfilmbetweenLa203andSiisO6nmAfterannealingattemperature700“Cfor10minutesin02thethicknessofSi02becomesthickverym

9、uchandreachesat2，lnmAfteraimealingattemperature700。Cfor1030minutesinN2，thethicknessofSi02is12nmAfterannealinginN2，annealingprocessattemperature700。Cfor10minutesin02secondlythethicknessofSi02doesnotchange，itshowsthattheSi

10、02layerisstableafterannealinginN2，thethicknessofSi02islessthanthatannealingin02SoaconclusioncanbegotthattheannealinginN2raisestheLaa03stability3TheexactsolutionandWKBapproximationarecompared，Theexactsolutionagreeswiththe