高溫SOIMOS器件和電路的研究.pdf

1、東南大學碩士學位論文高溫SOIMOS器件和電路的研究姓名：宋安飛申請學位級別：碩士專業(yè)：微電子學與固體電子學指導教師：馮耀蘭2001.3.1壅墮生堂塑!塑窒生篁些堡塞——一—————————蘭坐!竺生AbstractThedevelopmentofhumanityhasthrownmuchhigherrequirementsfortheapplicationtemperatureofelectronicsystemsBynow，semi

2、conductormaterials，suchasBulksilicon，SOI(Silicon。oninsulator)，GaAsandWBs(wide—BandgapSemiconductor)arecommonlyusedforhightemperaturemicroelectronicdevicesandcircuitsAmongthem，thosehigh—temperaturedevicesandcircuits，fabri

3、catedwithS01technologycanbestmeetthehightemperatureapplicationrequirementsAnindepthresearchonbothphysicalandelectricaIcharacteristicsofSOIMoSdevicesispresentedTheconductionmechanismsofthreedifferentoperationmodeSOIMoSdev

4、icesrThickfilmPartiallydepletedEnhancedmodedeviceThinfilmFully—depletedEnhancedmodedeviceandThinfilmFullydepletedAccumulation—modedevice)areanaiyzed，includingstructureeharacteristics，operationmechanism，thresholdvoltage，d

5、rainsourcecurrentandleakagecurrentInviewofhigh—temperatureapplication，emphasisissetonthephysicalcharacteristicsandelectricaicharacteristicsofboththinfilmfullydepletedenhancedmodeSOIMoSdevicesandthinillmfullydepletedaccum

6、ulation—modeSOIMOSdevicesThispaperthencarriesoutasystematicresearchonhightemperaturecharacteristiesofboththinfiImfullydepletedenhanced—modeandaccumulationmodeSOIMoSdevicesBasedtheavailabletheorythispaperpresentstheI／near

7、fittingmodelsofthresholdvoltageforthetwokindsofSOIMoSdevicesAtthesametimetheexperimentalresultsareanalyzedanddiscussedaccordingtothehightemperatureapplicationIntheend，theoperationcharacteristicsofhigh—temperatureSOICMoSi

8、nverterandringoscillatorareanalyzedThen，hightemperatureexperimentalresultsarepresentedrespectively，followedbynecessaryarialysisBoththeresearchresultsofthispaperandexperimentalresultsshowthatthoseSoIMOSdevicesandcircuitsf