電化學刻蝕半導體InP納米多孔陣列及機理研究.pdf

1、重慶大學碩士學位論文電化學刻蝕半導體InP納米多孔陣列及機理研究姓名：申慧娟申請學位級別：碩士專業(yè)：凝聚態(tài)物理指導教師：胡陳果廖克俊20060401重慶大學碩士學位論文英文摘要IIABSTRACTElectrochemicaletchingwhichhasthefeaturesoflowtemperaturelowdamagesimplicitylowcostsintheetchingprocesscanbeusedtoprepared

2、nanomaterials.Withthismethodpoussiliconhadbeenpreparedintheearly1990s.Motivatedbythestudyofpoussiliconlotsofresearchershavebeenattractedbypouscompoundsemiconductsduetotheirhighcarriermobilitysomespecificopticalproperties

3、.HowevertheetchingprocessofⅢⅤcompoundmaterialsismecomplicatedthanthatofSithemechanismoftheetchinghasnotbeenunderstoodyet.InthispaperwechoosetheInPasthematerialtostudyitselectrochemicaletchingprocessfitspriitiescomparedto

4、GaAs.Ithasbeenfoundthatpousstructureisvariedwithetchingconditionsindicatingapossibilityofregularpesarrayiftheoptimalconditioncouldbeused.Wealsofoundthatmostmacropeslayeroftheetchedsamplesusuallycoveredbymicropeslayerwith

5、minutediameterswhosepesizecanbefarmedifferentfrommacropeslayers.Comparingthepesfmationonscratchedsurfacewithintactsurfaceofsampleswefoundmacropesimagedpritothefmeroneshowingthatthepreprocessingisimptanttodefinethepesinit

6、ialposition.Thereasonisgiveninthepaper.Itisalsofoundsometimesbranchsappearinmanysamplesthesmoothdegreeofpewallincreaseswiththepesdeepening，demonstratedthepossibilitiesofpesarrayswithsmoothwallifoptimalconditionisoffered.

7、Thisisanalyzedinthepaper.Furthermetheetchingofsampleswithdifferentdopedconcentrationsarestudied.ItisfoundthatpesdepthdiameteronnInPwithheavilydopedconcentrationislargerthanmoderatelydopedsamples.Finallywediscussedthecurr

8、entoscillationinetchingprocess.Atconstantvoltageconditiontheperiodicalcurrentoscillationisobservedintheexperimentonlyappearsatthevoltagelargerthan1.3V.Theamplitudeincreaseswiththeimposedvoltage.Duringtheoscillationinlarg

9、eamplitudetherearemanyromsmallamplitudeoscillations.ComparingthecrosssectionSEMofpeswiththeItcurvelargeoscillationunexpectedlycoincidentwithpouslayerweanalyzedthelargesmalloscillationbasedonV.LehmannJensmodelsrespectivel