PECVD法制備包埋硅量子點的氮化硅薄膜及其發(fā)光特性研究.pdf

1、分類號UDC密級編號中國科學(xué)院研究生院碩士學(xué)位論文￡E型旦法制魚包埋硅量王壺的氫絲壁董鹱盈墓蕉盤簽：哇硒窒指導(dǎo)教師蟲焦拯嬰宜旦生圍型堂瞳蓬查堂堂鱉蜜扭越生塑理嬰壅逝巾請學(xué)位級別亟：!：學(xué)科專業(yè)名稱超塞查物型!!論文提交日期2QQ壘!12論文答辯日期20051培養(yǎng)單位生國魁堂瞳拯鲞出堂揸蜜狃樾生物堡嬰窒逝學(xué)位授予單位生國型堂瞳叢葒生院答辯委員會主席顆壩I‘論jc=PECVD法制備包埋硅量了點的氮化辟薄膜強1f發(fā)光特性1，玎究Abstrac

2、tSilicon—basednanomaterials，whicharedevelopedrapidlyinresentyears，areakindofnewpatternoptoelectronicinformationmaterialsTheyareofgreatimp01‘tallcebothinlight—emittingdiode(LED)andinoptoelectronicintegratedtechnology，Stab

3、leandefficientphotolmllinescence(PL)canbeachiex’edforsiliconclustersembeddedinsiliconoxideorsiliconnitride，butthePLoriginofsiliconnaflostructuresisstillindebateTheclarifyingofthePLoriginforthesiliconbasednanomaterialsnot

4、onlycandeepenandenrichtheresearchofthelOK’一dimensionalphysicsbutalsoisnloread、’antageousforthedevelopmentofthesilicon—basedoptoelectonicdex7icesInthisthesiswedealmainlyIlitbthegJ‘ox、xhandcharacterizationofsiliconnitridcf

5、ilmsembeddingSiquantunldots(QDSjandthemajorresultsarelistedbelox、‘：1ThesiliconnitfidefihnsembeddingSiQDSarepreparedbyplasmaenhancedchcmical、apordeposition(PECVD、techniqueatlowtemperatureFurthermoremestructuralandopticalp

6、ropertiesofthefihnsatdifferentannealingtemperaturesarestudied2’fheinfluenceofdifferentgasflowrateratiostotheSirichsiliconnitridefihnsisstudiedAndthestructuralandopticalpzlopeFtiesofthefilmsforthedifferentratiosal‘Cstudie

7、d3FromtheinfluenceofannealingtemperatureandgasflowrateratiostotheSi—richsiliconnitridefilms，therelationshipbetweentheopticalcharacteristicsandthestructuralpropertiesofthefilmsisstudiedandthePLoriginofthesiliconbasednanom