0.13微米閃存工藝平臺(tái)開發(fā)與優(yōu)化研究

1、目錄摘要..............................……，................……1Abstract.....................................................……2第一章引言..................................................……31.1不揮發(fā)存儲(chǔ)器的概述..............................

2、……，......……，..……，二，，....................……，二，_..……31.1.1存儲(chǔ)器與不揮發(fā)存儲(chǔ)器...........................……，................................................……31.1.2存儲(chǔ)器的分類...........................................……，................

3、................................……31.1.3非揮發(fā)存儲(chǔ)器的特性............................................................................……，...……51.2閃存存儲(chǔ)器的種類...........................................................................

4、..........................……61.2.1NOR型閃存存儲(chǔ)器..........................................................................................……61.2.2NAND型閃存存儲(chǔ)器二，.............................……，.……‘...............................

5、.........……71.2.3NOR與NAND型存儲(chǔ)器的比較..................................................................……81.1.30.13微米NORF]ash的的構(gòu)架...................……，.............................................……9第二章不揮發(fā)存儲(chǔ)器器件結(jié)構(gòu)與原理..........

6、.................……102.1不揮發(fā)存儲(chǔ)器的結(jié)構(gòu)..............................................................................……，..........……102.1.1浮柵存儲(chǔ)器的結(jié)構(gòu).........................................................一.....................

7、.........……102.1.2電荷俘獲型存儲(chǔ)器的結(jié)構(gòu)...................................................……，..................……1222不揮發(fā)存儲(chǔ)器的工作方式....……，........................................................……，.............……132.2.1不揮發(fā)存儲(chǔ)器工作原理....

8、............................................................................……132.2.2不揮發(fā)存儲(chǔ)器工作的機(jī)制.......................……，..............................................……132.30.13微米NORFlash器件的結(jié)構(gòu)與特性...........……，.........

9、.....................................……162.3.10.13微米flash器件沿位線方向的結(jié)構(gòu).......................................................……162.3.2沿溝道寬度方向的結(jié)構(gòu)...............................................................................

10、.……182.3.3器件的主要特性..........................................................................................……20第三章0.13微米Flash工藝平臺(tái)的開發(fā)........................……233.1設(shè)計(jì)規(guī)則的制定..................................................

11、....................................................……233.1.1外圍電路的設(shè)計(jì)規(guī)則......................................……，，......................................……233.1.2存儲(chǔ)單元的設(shè)計(jì)規(guī)則...............................……，，...............……

12、，.......................……263.1.3邊界的設(shè)計(jì)規(guī)則.......................................……，........……，...............................……273.2工藝流程的建立.....................................……，.......……，................................

13、..............……283.2.1主工藝流程順序的設(shè)計(jì)..............……，........................................……‘............……283.2.2各流程間的相互影響及改善......................................................................……29第四章工藝平臺(tái)的優(yōu)化與可靠性......

14、.........................……314.10.13微米flash工藝的優(yōu)化......................……，........................................................……314.1.1隧道氧化層生長條件的優(yōu)化......................................................................

15、..……314.1.2隧道氧化層形貌的優(yōu)化................................................................................……334.1.3接觸孔與疊柵的交疊誤差優(yōu)化......................................……，......................……444，20.13微米flash工藝的可靠性..........

16、........................................................................……45第五章總結(jié)與展望...........................................……48參考文獻(xiàn)..................……，...........................……50致謝...........................……，.

17、.....................……53AbstraetInrecentyears，Withthefastgrov改hofthemarkctsofhouseholdapPlianees，PersonaleomPuters，digitalcamerasandPortableequiPment，ICindustrygetsintoallasPectsofPeoPle，5dailylives.Non一volatilememy困VM)

18、，withdatasavedevenwithoutpowers即ply，hasbeendevelopedr即idly.Inthe21steentu盡，withtheinnovationofmanufaeturingProcesstechnology，thestorageeapaeityofanNVMreaehedtoGiga一bitlevel.Manykindsofflashmemies(flash)，includingNORandNA

19、NDflashmemories，weredeveloPedandappliedatanincrediblesPeed，whichwillProbablybethemostPoPularmemoryinthenearfuture.BasedonPraeticalwork，thisthesis15foeusedonthedeveloPmentandimProvementoftheProeessPlatfmof0.13umNORflashme

20、moryteehnology.Firstofall，thebaekgroundoftheNVM15introduced，andtheeharacteristiesofallNVMsarecomPared.Afterthat，thePhysiesoftheflashdeviee15analyzed，andanequivalentcapacitaneemodeltoquantifythewkingPrineiP]eofthedeviee15

21、obtained.Then，themeehanismofProgranllllinganderasefeonlrnonNVM15exPlained.Atlast，the0.13umNORflasheleetriealPerfmance，charaeteristiesandverifieationsarediseussed.EstablishingandoPtimizationofaProcessPlatfm15thernaintarge

22、tofthiswork.Besides0.180.13umlogieCMOSeireuitdesignrules，ithighiightedthesPeeificwellisolations，CD(CriticalDimension)adjustmentsandtheboundarydesignrules，andcombinedallofthemasasetofo.13而cronsNORflashdesignmlelibrary廠rak

23、ingintoaccountoftheadvantagesofallkindsofProeessfactors，webuiltasimPle，loweost，higheffieieneyandhighreliabilityProeessframe.Formingatunnelingoxide儷thhighqualityandreliability15theeoreofproeessing.Refetringtotheindus鉚rele

24、vantle耐ngsoftUnneloxide，weartemPtedtofindthebestapProaehundereertaineonditions.Andthen，reeiPetUningoftunneloxideandProcesssequenceoPtimizationwasmadestePbystePtoProducetheoxidelayer，whiehwasProvedtobewithgoodintegrity.Fi

25、nallythereliabilityoffiashmemywasdiseussed，itwasshownthatthesehemeofo.13umNORflashProeess15definitelyqualifiedfProduet，withgoodanti一distUrbance，enduraneeandretentionPerfmanees.Ke嚴(yán)，ords:NORFlashProeessDe、了eloPmentTunnelox