ULSI光刻圖形線(xiàn)寬調(diào)制的優(yōu)化研究.pdf

1、目錄觀1Abstract2弓唁3第一章緒論4第一節(jié)光刻技術(shù)現(xiàn)狀4第二節(jié)研究方向及意義8第二章光刻工藝介紹及現(xiàn)狀11第一節(jié)光刻工藝的介紹11第二節(jié)ACTSTrack光刻工藝(勻膠顯影)介紹14第三章勻膠相關(guān)工藝對(duì)光刻線(xiàn)寬調(diào)制影響分析21第一節(jié)襯底預(yù)處理對(duì)光刻線(xiàn)寬調(diào)制影響分析21第二節(jié)勻膠前冷卻對(duì)光刻線(xiàn)寬調(diào)制影響分析28第三節(jié)光刻膠勻膠槽對(duì)光刻線(xiàn)寬調(diào)制影響分析32第四節(jié)勻膠后烘烤（軟烤）對(duì)光刻線(xiàn)寬調(diào)制影響分析40第四章顯影相關(guān)工藝對(duì)光刻線(xiàn)寬

2、調(diào)制影響分析48第一節(jié)曝光后烘烤對(duì)光刻線(xiàn)寬調(diào)制影響分析48第二節(jié)顯影前冷卻對(duì)光刻線(xiàn)寬調(diào)制影響分析54第三節(jié)顯影槽對(duì)光刻線(xiàn)寬調(diào)制影響分析58第四節(jié)顯影后烘烤（硬烤）對(duì)光刻線(xiàn)寬調(diào)制影響分析66第五章論文工作在企業(yè)生產(chǎn)中的實(shí)際應(yīng)用71第一節(jié)DUV機(jī)臺(tái)烘烤槽工藝時(shí)間控制設(shè)定和優(yōu)化71第二節(jié)降低光刻膠成本研究76第六章結(jié)論82參考文獻(xiàn)84義85AbstractInthesemiconductmanufacturingprocesslithogra

3、phytechnologyisoneofthemostcriticaltechnologiesofintegratedcircuitswhichisanimptanteconomicalimpactfactsthroughouttheproductmanufacturing.Thecostoflithographyoccupies30to35percentageofthatofoverallthemanufacturingloop.Li

4、thographytechnologyisalsotheimptantreasonwhyintegratedcircuitsdevelopedfollowingtheMoeraw.Whilethelinewidthofthelithographyprocessisbecomingsmallerandsmallerthelinewidthandunifmityoflithographyhasmeandmeimpactonindustria

5、lmanufacturing.Andthisproblemhasnotbeensolved.Anystepincoatingdevelopingloopisoneoftheimptantfactsindecisionofthelinewidthcontrol.Ftheideallinewidthweneeddomecontrollingforanyprocsessstepsinthecoatingdeveloping.Bymanyser

6、iesofresearchesmanykindsoffactswhichimpactthelinewidtharegainedandclassified.Inthesefacts2factsthatissoftbakingtimeandPEBtimearethehighestandthevolumeofphotesistdummyisthelower.Thenpointtotheimptantfactoritissuccessfulto

7、improvethebakingprocesstimefDUVtoolsinIMESsystemtoreducetheunnecessarycontrolparameterintheIMESsystembyreducingthephotoresistdummyvolumethemanufacturingcostistrenddownmuch.Keywds:Linewidthunifmityphotoresistbakingcooling